Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
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Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
Auteurs : RBID : Pascal:99-0121003
Descripteurs français
- Pascal (Inist)
- 8460J, 7340L, 6835C, 6835F, 7320, 7870E, 7960J, Etude expérimentale, Cellule solaire cadmium sulfure, Cellule solaire cuivre séléniure, Indium séléniure, Gallium séléniure, Couche mince, Spectrométrie RX, Spectrométrie photoélectron, Structure électronique, Composition chimique, Interface, Hétérojonction, Diffusion(transport), Cuivre composé, Indium composé, Gallium composé, Semiconducteur ternaire, Cadmium composé, Cellule solaire, Couche enterrée, Structure interface, Etat interface, Hétérojonction semiconducteur, Spectre émission RX, Spectre photoélectron RX, Traitement thermique rapide, Diffusion mutuelle chimique.
English descriptors
- KwdEn :
- Buried layers, Cadmium compounds, Cadmium sulfide solar cells, Chemical composition, Chemical interdiffusion, Copper compounds, Copper selenide solar cells, Diffusion, Electronic structure, Experimental study, Gallium compounds, Gallium selenides, Heterojunctions, Indium compounds, Indium selenides, Interface states, Interface structure, Interfaces, Photoelectron spectroscopy, Rapid thermal processing, Semiconductor heterojunctions, Solar cells, Ternary semiconductors, Thin films, X-ray emission spectra, X-ray photoelectron spectra, X-ray spectroscopy, liquid phase deposition.
Abstract
A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In,Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. © 1999 American Institute of Physics.
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Heske</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Applied Science, University of California at Davis/Livermore, Livermore, California 94551</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Applied Science, University of California at Davis/Livermore, Livermore</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="06"><s1>Department of Physics, University of Wisconsin at Madison, Madison, Wisconsin 65500</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Department of Physics, University of Wisconsin at Madison, Madison</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="07"><s1>Tulane University, New Orleans, Louisiana 70118</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Louisiane</region></placeName><wicri:cityArea>Tulane University, New Orleans</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="08"><s1>Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation><affiliation wicri:level="3"><inist:fA14 i1="09"><s1>Siemens AG Corporate Research and Development, Domagkstr. 11, D-80807 Munchen, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Siemens AG Corporate Research and Development, Domagkstr. 11, D-80807 Munchen</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region><settlement type="city">Munich</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="10"><s1>Siemens Solar GmbH, Domagkstr. 11, D-80807 Munchen, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Siemens Solar GmbH, Domagkstr. 11, D-80807 Munchen</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Haute-Bavière</region><settlement type="city">Munich</settlement></placeName></affiliation></author><author><name sortKey="Eich, D" uniqKey="Eich D">D. Eich</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Fink, R" uniqKey="Fink R">R. Fink</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Umbach, E" uniqKey="Umbach E">E. Umbach</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Van Buuren, T" uniqKey="Van Buuren T">T. Van Buuren</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Lawrence Livermore National Laboratory, Livermore, California 94551</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lawrence Livermore National Laboratory, Livermore</wicri:cityArea></affiliation></author><author><name sortKey="Bostedt, C" uniqKey="Bostedt C">C. Bostedt</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Lawrence Livermore National Laboratory, Livermore, California 94551</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lawrence Livermore National Laboratory, Livermore</wicri:cityArea></affiliation></author><author><name sortKey="Terminello, L J" uniqKey="Terminello L">L. J. Terminello</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Lawrence Livermore National Laboratory, Livermore, California 94551</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Lawrence Livermore National Laboratory, Livermore</wicri:cityArea></affiliation></author><author><name sortKey="Kakar, S" uniqKey="Kakar S">S. Kakar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Grush, M M" uniqKey="Grush M">M. M. Grush</name></author><author><name sortKey="Callcott, T A" uniqKey="Callcott T">T. A. Callcott</name></author><author><name sortKey="Himpsel, F J" uniqKey="Himpsel F">F. J. Himpsel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Ederer, D L" uniqKey="Ederer D">D. L. Ederer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Perera, R C C" uniqKey="Perera R">R. C. C. Perera</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Riedl, W" uniqKey="Riedl W">W. Riedl</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Karg, F" uniqKey="Karg F">F. Karg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0121003</idno><date when="1999-03-08">1999-03-08</date><idno type="stanalyst">PASCAL 99-0121003 AIP</idno><idno type="RBID">Pascal:99-0121003</idno><idno type="wicri:Area/Main/Corpus">015837</idno><idno type="wicri:Area/Main/Repository">014232</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buried layers</term><term>Cadmium compounds</term><term>Cadmium sulfide solar cells</term><term>Chemical composition</term><term>Chemical interdiffusion</term><term>Copper compounds</term><term>Copper selenide solar cells</term><term>Diffusion</term><term>Electronic structure</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium selenides</term><term>Heterojunctions</term><term>Indium compounds</term><term>Indium selenides</term><term>Interface states</term><term>Interface structure</term><term>Interfaces</term><term>Photoelectron spectroscopy</term><term>Rapid thermal processing</term><term>Semiconductor heterojunctions</term><term>Solar cells</term><term>Ternary semiconductors</term><term>Thin films</term><term>X-ray emission spectra</term><term>X-ray photoelectron spectra</term><term>X-ray spectroscopy</term><term>liquid phase deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460J</term><term>7340L</term><term>6835C</term><term>6835F</term><term>7320</term><term>7870E</term><term>7960J</term><term>Etude expérimentale</term><term>Cellule solaire cadmium sulfure</term><term>Cellule solaire cuivre séléniure</term><term>Indium séléniure</term><term>Gallium séléniure</term><term>Couche mince</term><term>Spectrométrie RX</term><term>Spectrométrie photoélectron</term><term>Structure électronique</term><term>Composition chimique</term><term>Interface</term><term>Hétérojonction</term><term>Diffusion(transport)</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur ternaire</term><term>Cadmium composé</term><term>Cellule solaire</term><term>Couche enterrée</term><term>Structure interface</term><term>Etat interface</term><term>Hétérojonction semiconducteur</term><term>Spectre émission RX</term><term>Spectre photoélectron RX</term><term>Traitement thermique rapide</term><term>Diffusion mutuelle chimique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In,Ga)Se<sub>2</sub> interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>74</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Observation of intermixing at the buried CdS/Cu(In,Ga)Se<sub>2</sub> thin film solar cell heterojunction</s1> </fA08><fA11 i1="01" i2="1"><s1>HESKE (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>EICH (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>FINK (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>UMBACH (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>VAN BUUREN (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>BOSTEDT (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>TERMINELLO (L. J.)</s1></fA11><fA11 i1="08" i2="1"><s1>KAKAR (S.)</s1></fA11><fA11 i1="09" i2="1"><s1>GRUSH (M. M.)</s1></fA11><fA11 i1="10" i2="1"><s1>CALLCOTT (T. A.)</s1></fA11><fA11 i1="11" i2="1"><s1>HIMPSEL (F. J.)</s1></fA11><fA11 i1="12" i2="1"><s1>EDERER (D. L.)</s1></fA11><fA11 i1="13" i2="1"><s1>PERERA (R. C. C.)</s1></fA11><fA11 i1="14" i2="1"><s1>RIEDL (W.)</s1></fA11><fA11 i1="15" i2="1"><s1>KARG (F.)</s1></fA11><fA14 i1="01"><s1>Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ><sZ>15 aut.</sZ></fA14><fA14 i1="02"><s1>Experimentelle Physik II, Universitat Wurzburg, Am Hubland, D-97074 Wurzburg, Germany</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Lawrence Livermore National Laboratory, Livermore, California 94551</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Applied Science, University of California at Davis/Livermore, Livermore, California 94551</s1></fA14><fA14 i1="05"><s1>University of Tennessee, Knoxville, Tennessee 37996</s1><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="06"><s1>Department of Physics, University of Wisconsin at Madison, Madison, Wisconsin 65500</s1></fA14><fA14 i1="07"><s1>Tulane University, New Orleans, Louisiana 70118</s1></fA14><fA14 i1="08"><s1>Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1></fA14><fA14 i1="09"><s1>Siemens AG Corporate Research and Development, Domagkstr. 11, D-80807 Munchen, Germany</s1></fA14><fA14 i1="10"><s1>Siemens Solar GmbH, Domagkstr. 11, D-80807 Munchen, Germany</s1></fA14><fA20><s1>1451-1453</s1></fA20><fA21><s1>1999-03-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0121003</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In,Ga)Se<sub>2</sub> interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40L</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H35C</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35F</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C20</s0></fC02><fC02 i1="06" i2="3"><s0>001B70H70E</s0></fC02><fC02 i1="07" i2="3"><s0>001B70I60J</s0></fC02><fC02 i1="08" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7340L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6835C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7320</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7870E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7960J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Cellule solaire cadmium sulfure</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Cadmium sulfide solar cells</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Cellule solaire cuivre séléniure</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Copper selenide solar cells</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Gallium séléniure</s0><s2>NK</s2></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Spectrométrie RX</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>X-ray spectroscopy</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Spectrométrie photoélectron</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Photoelectron spectroscopy</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Structure électronique</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Electronic structure</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composition chimique</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Chemical composition</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Interface</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Interfaces</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Hétérojonction</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Heterojunctions</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Diffusion(transport)</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Diffusion</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Cuivre composé</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Copper compounds</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Semiconducteur ternaire</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Ternary semiconductors</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Cellule solaire</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Solar cells</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Couche enterrée</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Buried layers</s0></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Structure interface</s0></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Interface structure</s0></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Spectre émission RX</s0></fC03><fC03 i1="31" i2="3" l="ENG"><s0>X-ray emission spectra</s0></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0></fC03><fC03 i1="32" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0></fC03><fC03 i1="33" i2="3" l="ENG"><s0>liquid phase deposition</s0><s4>INC</s4></fC03><fC03 i1="34" i2="3" l="FRE"><s0>Traitement thermique rapide</s0></fC03><fC03 i1="34" i2="3" l="ENG"><s0>Rapid thermal processing</s0></fC03><fC03 i1="35" i2="3" l="FRE"><s0>Diffusion mutuelle chimique</s0></fC03><fC03 i1="35" i2="3" l="ENG"><s0>Chemical interdiffusion</s0></fC03><fN21><s1>067</s1></fN21><fN47 i1="01" i2="1"><s0>9909M000097</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
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